 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| AP4417GH/J Pb Free Plating Product Advanced Power Electronics Corp. Lower On-resistance Simple Drive Requirement Fast Switching Characteristic RoHS Compliant G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -35V 75m -15A Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP4417GJ) is available for low-profile applications. G GD S TO-252(H) D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -35 20 -15 -9 -40 26 0.21 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.8 110 Units /W /W Data and specifications subject to change without notice 200411051-1/4 AP4417GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA 2 Min. -35 -1 - Typ. -0.03 9 6 1.4 3.5 6 18 17 4 400 95 70 6 Max. Units 75 110 -3 -1 -25 100 10 640 9 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-10A VGS=-4.5V, ID=-8A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=150 C) o VDS=VGS, ID=-250uA VDS=-10V, ID=-8A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= 20V ID=-8A VDS=-30V VGS=-4.5V VDS=-15V ID=-8A RG=3.3,VGS=-10V RD=1.88 VGS=0V VDS=-25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-10A, VGS=0V IS=-8A, VGS=0V, dI/dt=-100A/s Min. - Typ. 18 12 Max. Units -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 2/4 AP4417GH/J 45 35 T C = 25 C -ID , Drain Current (A) o -10V -7.0V 28 T C = 150 o C -ID , Drain Current (A) -10V -7.0V 30 -5.0V -4.5V 15 21 -5.0V -4.5V 14 V G = -3.0 V 7 V G = -3.0 V 0 0 2 4 6 8 0 0 2 4 6 8 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 170 1.8 110 Normalized RDS(ON) 140 I D = -8 A T C =25 I D =-10A V G =-10V 1.5 RDS(ON) (m ) 1.2 80 0.9 50 0.6 2 4 6 8 10 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 12 8 Normalized -VGS(th) (V) 1.2 -IS(A) T j =150 o C T j =25 o C 4 0.8 0 0.4 0 0.4 0.8 1.2 1.6 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP4417GH/J 12 f=1.0MHz 1000 -VGS , Gate to Source Voltage (V) V DS =-30V I D =-8A 8 C iss C (pF) 100 C oss C rss 4 0 0 2 4 6 8 10 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100.0 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 100us 10.0 0.2 -ID (A) 0.1 1ms 1.0 0.1 0.05 PDM 0.02 T c =25 C Single Pulse 0.1 0.1 1 10 o 10ms 100ms DC t T 0.01 Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 100 0.00001 0.0001 0.001 0.01 0.1 1 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 V DS =-5V VG QG -ID , Drain Current (A) 20 T j =25 C o T j =150 C o -4.5V QGS QGD 10 Charge 0 0 2 4 6 8 Q -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4/4 |
Price & Availability of AP4417GJ
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |